Organic light emitting diode display and manufacturing method thereof

ABSTRACT

An organic light emitting diode display includes a substrate, switching elements on the substrate, at least one barrier member on the substrate, a passivation layer covering the switching elements and including a protection opening exposing the barrier member, pixel electrodes on the passivation layer and connected to the switching elements, auxiliary electrodes separated from and formed from a same layer as the pixel electrodes, an organic emission layer including a pixel emission layer and a common emission layer sequentially formed on the pixel electrodes, and a common electrode including an auxiliary common electrode and a main common electrode sequentially formed on the common emission layer. The common emission layer and the auxiliary common electrode have a common contact hole at a position corresponding to a position of the barrier member. The main common electrode is connected with the auxiliary electrode through the common contact hole.

CROSS-REFERENCE TO RELATED APPLICATION

Korean Patent Application No. 10-2015-0018154, filed on Feb. 5, 2015, inthe Korean Intellectual Property Office, and entitled: “Organic LightEmitting Diode Display and Manufacturing Method Thereof,” isincorporated by reference herein in its entirety.

BACKGROUND

1. Field

Embodiments relate to an organic light emitting diode display and amanufacturing method thereof.

2. Description of the Related Art

An organic light emitting diode display includes two electrodes of ananode and a cathode, and an organic light emitting layer interposedbetween the two electrodes. The anode injects holes and the cathodeinjects electrons into the light emitting layer. The injected electronsand holes are combined to form excitons and the excitons emit light asdischarge energy.

Such an organic light emitting diode display includes a plurality ofpixels including an organic light emitting diode which is aself-emission device, and in each pixel, a plurality of thin filmtransistors and storage capacitors for driving the organic lightemitting diode are formed.

SUMMARY

Embodiments are directed to an organic light emitting diode displayincluding a substrate, a plurality of switching elements on thesubstrate, at least one barrier member on the substrate, a passivationlayer covering the plurality of switching elements, the passivationlayer including a protection opening exposing the barrier member, aplurality of pixel electrodes on the passivation layer, the pixelelectrodes being connected to the switching elements, a plurality ofauxiliary electrodes separated from and formed from a same layer as theplurality of pixel electrodes, an organic emission layer including apixel emission layer and a common emission layer sequentially formed onthe plurality of pixel electrodes, and a common electrode including anauxiliary common electrode and a main common electrode sequentiallyformed on the common emission layer. The common emission layer and theauxiliary common electrode have a common contact hole at a positioncorresponding to a position of the barrier member. The main commonelectrode may be connected with an auxiliary electrode of the pluralityof auxiliary electrodes through the common contact hole.

The substrate may include a plurality of pixel areas and a plurality ofpixel edge areas between the plurality of pixel areas. The barriermember, the protection opening, and the auxiliary electrode may belocated at a pixel edge area of the plurality of pixel edge areas.

The auxiliary electrode may include a first auxiliary electrode and asecond auxiliary electrode separated from each other, the firstauxiliary electrode and the second auxiliary electrode including endsthat face each other.

The auxiliary electrode may overlap the barrier member.

The barrier member may be positioned between the first auxiliaryelectrode and the second auxiliary electrode.

The barrier member may be exposed through the protection opening and thecommon contact hole. The main common electrode is connected with thebarrier member.

The organic light emitting diode display may further include a pixeldefinition layer covering a pixel electrode of the plurality of pixelelectrodes and the auxiliary electrode, the pixel definition layerincluding an auxiliary opening exposing a portion of the auxiliaryelectrode. The barrier member may be positioned at the auxiliaryopening.

The main common electrode may be connected with the auxiliary electrodeexposed through the auxiliary opening and the common contact hole.

The auxiliary electrode exposed through the auxiliary opening may beconnected with the common emission layer.

The organic light emitting diode display may further include a scan lineformed on the substrate and transmitting a scan signal to a switchingelement of the plurality of switching elements, and a data line crossingthe scan line and transmitting a data signal to the switching element.The barrier member may include a first barrier member formed from a samelayer as the scan line, and a second barrier member overlapping thefirst barrier member and formed from a same layer as the data line.

The switching element may include a switching transistor connected tothe scan line and the data line, and a driving transistor connected tothe switching transistor.

The organic light emitting diode display may further include a thirdbarrier member between the first barrier member and the second barriermember, the third barrier member overlapping the first barrier memberand the second barrier member.

Embodiments are also directed to a method for manufacturing an organiclight emitting diode display, the method including forming a pluralityof switching elements and at least one barrier member on a substrateforming a passivation layer covering a plurality of switching elementsthe passivation layer including a protection opening exposing thebarrier member, forming a plurality of pixel electrodes on thepassivation layer, a pixel electrode of the plurality of pixelelectrodes being connected to a switching element of the plurality ofswitching elements, forming a plurality of auxiliary electrodes spacedapart from the plurality of pixel electrodes on the passivation layer,an auxiliary electrode of the plurality of auxiliary electrodesincluding a first auxiliary electrode and a second auxiliary electrode,forming an organic emission layer sequentially including a pixelemission layer and a common emission layer on the plurality of pixelelectrodes, forming an auxiliary common electrode on the common emissionlayer, forming a common contact hole through the common emission layerand the auxiliary common electrode, the common contact hole exposing aportion of the auxiliary electrode, and forming a main common electrodeon the auxiliary common electrode, the main common electrode beingconnected with the auxiliary electrode through the common contact hole.

The first auxiliary electrode may be formed to be electrically separatedfrom the second auxiliary electrode. Forming the common contact hole mayinclude applying a breakdown voltage between the first auxiliaryelectrode and the second auxiliary electrode to enable removal of thecommon emission layer and the auxiliary common electrode on the barriermember.

The first auxiliary electrode and the second auxiliary electrode may beformed to be equipotentially connected. Forming the common contact holemay include applying a breakdown voltage between the auxiliary electrodeand the auxiliary common electrode to enable removal the common emissionlayer and the auxiliary common electrode on the barrier member.

The substrate may include a plurality of pixel areas and a plurality ofpixel edge areas formed between a plurality of pixel areas. The barriermember, the protection opening, and the auxiliary electrode may beformed at the pixel edge area.

The barrier member and the auxiliary electrode may be formed to be in anoverlapping relationship.

The barrier member may be formed between the first auxiliary electrodeand the second auxiliary electrode.

The method may further include forming a pixel definition layer coveringthe pixel electrode and the auxiliary electrode and having an auxiliaryopening exposing a portion of the auxiliary electrode. The barriermember may be positioned at the auxiliary opening.

The main common electrode may be connected with the auxiliary electrodeexposed through the auxiliary opening and the common contact hole.

The auxiliary electrode exposed through the auxiliary opening may beconnected with the common emission layer.

BRIEF DESCRIPTION OF THE DRAWINGS

Features will become apparent to those of skill in the art by describingin detail exemplary embodiments with reference to the attached drawingsin which:

FIG. 1 illustrates an entire circuit diagram of an organic lightemitting diode display according to an exemplary embodiment.

FIG. 2 illustrates an equivalent circuit diagram of one pixel of anorganic light emitting diode display according to an exemplaryembodiment.

FIG. 3 illustrates a schematic layout view of a plurality of transistorsand capacitors of an organic light emitting diode display according toan exemplary embodiment.

FIG. 4 illustrates a detailed layout view of FIG. 3.

FIG. 5 illustrates a schematic layout view of a plurality of pixelelectrodes and an auxiliary electrode of an organic light emitting diodedisplay according to an exemplary embodiment.

FIG. 6 illustrates a detailed layout view of a portion A of FIG. 5.

FIG. 7 illustrates a cross-sectional view of the organic light emittingdiode display of FIG. 4 taken along a line VII-VII.

FIG. 8 illustrates a cross-sectional view of the organic light emittingdiode display of FIG. 4 taken along a line VIII-VIII.

FIG. 9 illustrates a cross-sectional view taken along line IX-IX of FIG.6.

FIG. 10 and FIG. 12 illustrate layout views sequentially showing amanufacturing method of an organic light emitting diode displayaccording to an exemplary embodiment.

FIG. 11 illustrates a cross-sectional view taken along a line XI-XI ofFIG. 10.

FIG. 13 illustrates a cross-sectional view taken along a line XIII-XIIIof FIG. 12.

FIG. 14 illustrates a cross-sectional view of a manufacturing method ofan organic light emitting diode display according to another exemplaryembodiment taken along a line XIII-XIII of FIG. 12.

FIG. 15 illustrates a detailed layout view of an organic light emittingdiode display according to another exemplary embodiment corresponding toa portion A of FIG. 5.

FIG. 16 illustrates a cross-sectional view taken along a line XVI-XVI ofFIG. 15.

FIG. 17 illustrates a layout view showing one step of a manufacturingmethod of an organic light emitting diode display according to anotherexemplary embodiment.

FIG. 18 illustrates a cross-sectional view taken along a lineXVIII-XVIII of FIG. 17.

FIG. 19 illustrates a view of a plurality of transistor and a capacitorof an organic light emitting diode display according to anotherexemplary embodiment.

FIG. 20 illustrates a detailed layout view of FIG. 19.

FIG. 21 illustrates a detailed layout view corresponding to a portion Aof FIG. 5 of the exemplary embodiment.

FIG. 22 illustrates a cross-sectional view taken along a line XXII-XXIIof FIG. 20.

FIG. 23 illustrates a cross-sectional view taken along a lineXXIII-XXIII of FIG. 20.

FIG. 24 illustrates a cross-sectional view taken along a line XXIV-XXIVof FIG. 21.

DETAILED DESCRIPTION

Example embodiments will now be described more fully hereinafter withreference to the accompanying drawings; however, they may be embodied indifferent forms and should not be construed as limited to theembodiments set forth herein. Rather, these embodiments are provided sothat this disclosure will be thorough and complete, and will fullyconvey exemplary implementations to those skilled in the art.

In the drawing figures, the dimensions of layers and regions may beexaggerated for clarity of illustration. It will also be understood thatwhen a layer or element is referred to as being “on” another layer orsubstrate, it can be directly on the other layer or substrate, orintervening layers may also be present. Further, it will be understoodthat when a layer is referred to as being “between” two layers, it canbe the only layer between the two layers, or one or more interveninglayers may also be present. Like reference numerals refer to likeelements throughout.

Further, in the specification, the term “in a plan view” indicates thatan object portion is viewed from the above, and the term “in across-section” indicates that a cross-section taken by verticallycutting an object portion is viewed from the side.

Also, a number of thin film transistors (TFT) and capacitors are shownin accompanying drawings, and an organic light emitting diode displaymay include a plurality of transistors and at least one capacitor in onepixel and may be formed to have various structures in which separatewires are further formed or existing wires are omitted. Here, the pixelis a minimum unit for displaying an image, and the organic lightemitting diode display displays an image through a plurality of pixels.

FIG. 1 illustrates an entire circuit diagram of an organic lightemitting diode display according to an exemplary embodiment.

As shown in FIG. 1, the organic light emitting diode display accordingto an exemplary embodiment may include a display unit 100 displaying animage and a scan driver 400 and a data driver 500 positioned near thedisplay unit 100. Positions of the scan driver 400 and a data driver 500may vary. For example, in FIG. 1, the scan driver 400 is shown as beingpositioned at a left side of the display unit 100 and the data driver500 is shown as being positioned at an upper side of the display unit100. In some implementations, the scan driver 400 and the data driver500 may be positioned at one side of the display unit 100.

The display unit 100 may include a plurality of pixels PX approximatelyarranged in a matrix. The plurality of pixels PX may be connected to aplurality of signal lines SL[1]-SL[n]. EML[1]-EML[n]. DL[1]-DL[m],ELVDDL, ELVSSL, and VINTL, the plurality of signal lines including aplurality of scan lines SL[1]-SL[n], a plurality of light emissioncontrol lines EML[1]-EML[n], a plurality of data lines DL[1]-DL[m], adriving voltage line ELVDDL transmitting a driving voltage ELVDD, acommon voltage line ELVSSL transmitting a common voltage ELVSS, and aninitialization voltage line VINTL transmitting an initialization voltageVint.

The scan driver 400 may be connected to the plurality of scan linesSL[1]-SL[n] and The plurality of light emission control linesEML[1]-EML[n]. The scan driver 400 may generates a plurality of scansignal S[1]-S[n] and a plurality of light emission control signalsEM[1]-EM[n] according to a first driving control signal CONT1. The scandriver 400 may respectively transmit a plurality of scan signalsS[1]-S[n] to the corresponding scan lines SL[1]-SL[n] and mayrespectively transmit a plurality of light emission control signalsEM[1]-EM[n] to the corresponding light emission control linesEML[1]-EML[n].

The data driver 500 may sample and latch image data R, G, and Baccording to a second driving control signal CONT2 to generate aplurality of data signals D[1]-D[m]. The data driver 500 mayrespectively transmit the data signals D[1]-D[m] to the correspondingdata line DL[1]-DL[m].

FIG. 2 illustrates an equivalent circuit diagram of one pixel of anorganic light emitting diode display according to an exemplaryembodiment.

As shown in FIG. 2, one pixel PX of the organic light emitting diodedisplay according to the current exemplary embodiment may include aplurality of transistors T1, T2, T3, T4, T5, and T6 connected to aplurality of signal lines 151, 152, 153, 154. 171, and 172, capacitorsCst and Cb, and an organic light emitting diode OLD. It is to beunderstood that in other implementation, the number of transistors andcapacitors, and the arrangement thereof, may vary from what is shown inFIG. 2.

The signal lines 151, 152, 153, 154 may include a scan line 151, aprevious scan line 152, an emission control line 153, and aninitialization voltage line 154 respectively applying the scan signalSn, the previous scan signal Sn−1, the emission control signal EM, andthe initialization voltage Vint and formed along the row direction. Thesignal lines 171 and 172 may include a data line 171 and a drivingvoltage line 172 crossing the scan line 151, the previous scan line 152,the emission control line 153, and the initialization voltage line 154and respectively applying the data signal Dm and the driving voltageELVDD to the pixel PX.

The plurality of transistors T1, T2, T3, T4, T5, and T6 include adriving thin film transistor T1, a switching thin film transistor T2, acompensation transistor T3, an initialization transistor T4, anoperation control transistor T5, and a light emission control transistorT6. The capacitors Cst and Cb include a storage capacitor Cst and aboosting capacitor Cb.

A gate electrode G1 of the driving thin film transistor T1 may beconnected to one end Cst1 of the storage capacitor Cst. A sourceelectrode S1 of the driving thin film transistor T1 may be connectedwith the driving voltage line 172 via the operation control thin filmtransistor T5, and a drain electrode D1 of the driving thin filmtransistor T1 may be electrically connected with an anode of the organiclight emitting diode OLD via the emission control thin film transistorT6. The driving thin film transistor T1 may receive the data signal Dmaccording to a switching operation of the switching thin film transistorT2 to supply a driving current Id to the organic light emitting diodeOLD.

A gate electrode G2 of the switching thin film transistor T2 may beconnected with the scan line 151. A source electrode S2 of the switchingthin film transistor T2 may be connected with the data line 171, and adrain electrode D2 of the switching thin film transistor T2 may beconnected with the source electrode S1 of the driving thin filmtransistor T1 and with the driving voltage line 172 via the operationcontrol thin film transistor T5. The switching thin film transistor T2may be turned on according to the scan signal Sn received through thescan line 151 to perform a switching operation for transferring the datasignal Dm transferred to the data line 171 to the source electrode S1 ofthe driving thin film transistor T1.

A gate electrode G3 of the compensation thin film transistor T3 may bedirectly connected with the scan line 151. A source electrode S3 of thecompensation thin film transistor T3 may be connected to the drainelectrode D1 of the driving thin film transistor T1 and with an anode ofthe organic light emitting diode OLD via the emission control thin filmtransistor T6, and a drain electrode D3 of the compensation thin filmtransistor T3 may be connected with the drain electrode D4 of theinitialization thin film transistor T4, the gate electrode G1 of thedriving thin film transistor T1, one end Cst1 of the storage capacitorCst, and one end Cb1 of the boosting capacitor Cb together. Thecompensation transistor T3 may be turned on according to the scan signalSn received through the scan line 151 to connect the gate electrode G1and the drain electrode D1 of the driving transistor T1 anddiode-connect the driving transistor T1.

A gate electrode G4 of the initialization transistor T4 may be connectedwith the previous scan line 152. A source electrode S4 of theinitialization transistor T4 may be connected with an initializationvoltage line 154, and a drain electrode D4 of the initializationtransistor T4 may be connected with one end Cst1 of the storagecapacitor Cst, the gate electrode G1 of the driving transistor T1, andone end Cb1 of the boosting capacitor Cb together through the drainelectrode D3 of the compensation transistor T3. The initializationtransistor T4 may be turned on according to a previous scan signal Sn−1received through the previous scan line 152 to transfer theinitialization voltage Vint to the gate electrode G1 of the drivingtransistor T1, and then to perform an initialization operation ofinitializing a voltage of the gate electrode G1 of the drivingtransistor T1.

A gate electrode G5 of the operation control transistor T5 may beconnected with the light emission control line 153. A source electrodeS5 of the operation control transistor T5 may be connected with thedriving voltage line 172, and a drain electrode D5 of the operationcontrol transistor T5 may be connected with the source electrode S1 ofthe driving transistor T1 and the drain electrode S2 of the switchingtransistor T2.

A gate electrode G6 of the emission control transistor T6 may beconnected to the light emission control line 153. The source electrodeS6 of the first emission control transistor T6 may be connected to thedrain electrode D1 of the driving transistor T1 and the source electrodeS3 of the compensation transistor T3, and the drain electrode D6 of thefirst emission control transistor T6 may be electrically connected tothe anode of the organic light emitting diode OLD. The operation controltransistor T5 and the first emission control transistor T6 may besimultaneously turned on according to the emission control signal EMtransmitted to the light emission control line 153 such that the drivingvoltage ELVDD may be compensated through the diode-connected drivingtransistor T1 and may be transmitted to the organic light emitting diodeOLD such that the driving current Id may flow to the organic lightemitting diode OLD to be emitted, thereby displaying the image.

The scan line 151 connected to the gate electrode G2 of the switchingtransistor T2 may be connected to the other end Cb2 of the boostingcapacitor Cb. One end Cb1 of the boosting capacitor Cb may be connectedto the gate electrode G1 of the driving transistor T1.

The other end Cst2 of the storage capacitor Cst may be connected withthe driving voltage line 172. A cathode of the organic light emittingdiode OLD may be connected with a common voltage line 741 transferring acommon voltage ELVSS.

Hereinafter, a detailed operation process of one pixel of the organiclight emitting diode display according to the exemplary embodiment willbe described in detail.

For an initializing period, the previous scan signal Sn−1 having a lowlevel may be supplied through the previous scan line 152. Theinitializing thin film transistor T4 may be turned on in response to theprevious scan signal Sn−1 having the low level such that the initialvoltage Vint is connected to the gate electrode G1 of the drivingtransistor T1 from the initialization voltage line 154 through theinitializing thin film transistor T4, and the driving thin filmtransistor T1 is initialized by the initialization voltage Vint.

For a data programming period, the scan signal Sn having a low level maybe supplied through the scan line 151. The switching thin filmtransistor T2 and the compensating thin film transistor T3 may be turnedon in response to the scan signal Sn having the low level. At this time,the driving transistor T1 may be diode-connected through the turned-oncompensation transistor T3 and may be biased in a forward direction.

A compensation voltage Dm+Vth (Vth is a negative (−) value) reduced by athreshold voltage Vth of the driving thin film transistor T1 from a datasignal Dm supplied from the data line 171 may be applied to the gateelectrode G1 of the driving thin film transistor T1. The gate voltage Vgapplied to the gate electrode G1 of the driving transistor T1 may becomethe compensation voltage (Dm+Vth). The driving voltage ELVDD and thecompensation voltage (Dm+Vth) may be applied to both terminals of thestorage capacitor Cst, and a charge corresponding to a voltagedifference between both terminals may be stored in the storage capacitorCst.

When the voltage level of the scan signal Sn is changed to a high levelwhile the supply of the scan signal Sn stops, the voltage applied to thegate electrode G1 of the driving thin film transistor T1 may be changedin response to a voltage change width of the scan signal Sn by couplingof the boosting capacitor Cb. In this case, the voltage applied to thegate electrode G1 of the driving thin film transistor T1 may be changedby charge sharing between the storage capacitor Cst and the boostingcapacitor Cb. Accordingly, a voltage change amount applied to thedriving gate electrode G1 may be changed in proportion to a chargesharing value between the storage capacitor Cst and the boostingcapacitor Cb in addition to a voltage change width of the scan signalSn.

For an emission period, the emission control signal En supplied from theemission control line 123 may be changed from the high level to the lowlevel. The first emission control thin film transistor T5 and the secondemission control thin film transistor T6 may be turned on by theemission control signal En of the low level for the emission period.

A driving current Id may be generated according to the voltagedifference between the gate voltage of the gate electrode G1 of thedriving transistor T1 and the driving voltage ELVDD. The driving currentId may be supplied to the organic light emitting diode OLD through theemission control transistor T6. The gate-source voltage Vgs of thedriving thin film transistor T1 may be maintained as “(Dm+Vth)-ELVDD” bythe storage capacitor Cst for the emission period, and according to acurrent-voltage relationship of the driving thin film transistor T1, thedriving current Id may be proportional to the square “(Dm-ELVDD)²” of avalue obtained by subtracting the threshold voltage from the source-gatevoltage. Accordingly, the driving current Id is determined regardless ofthe threshold voltage Vth of the driving thin film transistor T1.

Next, the detailed structure of the organic light emitting diode displayshown in FIG. 1 and FIG. 2 will be described with reference to FIG. 3,FIG. 4, FIG. 5, FIG. 6, FIG. 7, FIG. 8, and FIG. 9 along with FIG. 1.

FIG. 3 illustrates a schematic layout view of a plurality of transistorsand capacitors of an organic light emitting diode display according toan exemplary embodiment, FIG. 4 illustrates a detailed layout view ofFIG. 3, FIG. 5 illustrates a schematic layout view of a plurality ofpixel electrodes and an auxiliary electrode of an organic light emittingdiode display according to an exemplary embodiment, FIG. 6 illustrates adetailed layout view of a portion A of FIG. 5, FIG. 7 illustrates across-sectional view of the organic light emitting diode display of FIG.4 taken along a line VII-VII, FIG. 8 illustrates a cross-sectional viewof the organic light emitting diode display of FIG. 4 taken along a lineVIII-VIII, and FIG. 9 illustrates a cross-sectional view taken alongline IX-IX of FIG. 6.

Hereinafter, a detailed planar structure of the organic light emittingdiode display according to the exemplary embodiment will be firstdescribed in detail with reference to FIG. 3, FIG. 4, FIG. 5, and FIG.6, and a detailed cross-sectional structure will be described in detailwith reference to FIG. 7, FIG. 8, and FIG. 9.

As shown in FIG. 3, the organic light emitting diode display accordingto an exemplary embodiment may include a scan line 151, a previous scanline 152, a light emission control line 153, and an initializationvoltage line 154 connected to the pixel PX, formed in a row directionand respectively applying a scan signal Sn, a previous scan signal Sn−1,a light emission control signal EM, and an initialization voltage Vint,and may include includes a data line 171 and a driving voltage line 172crossing the scan line 151, the previous scan line 152, the lightemission control line 153, and the initialization voltage line 154 andrespectively applying a data signal Dm and a driving voltage ELVDD tothe pixel PX.

In one pixel PX, a driving transistor T1, a switching transistor T2, acompensation transistor T3, an initialization transistor T4, anoperation control transistor T5, a light emission control transistor T6,a storage capacitor Cst, a boosting capacitor Cb, and an organic lightemitting diode OLD may be formed. The organic light emitting diode OLDmay include a pixel electrode 191, an organic emission layer 370, and acommon electrode 270. The compensation transistor T3 and theinitialization transistor T4 may be configured as a dual gate structuretransistor in order to block a leakage current.

Each channel of the driving transistor T1, the switching transistor T2,the compensation transistor T3, the initialization transistor T4, theoperation control transistor T5, and the light emission controltransistor T6 may be formed in one semiconductor 130 connected thereto.The semiconductor 130 may be formed to be curved in various shapes. Thesemiconductor 130 may be made of a polycrystalline semiconductormaterial or an oxide semiconductor material. The oxide semiconductormaterial may include an oxide based on titanium (Ti), hafnium (Hf),zirconium (Zr), aluminum (Al), tantalum (Ta), germanium (Ge), zinc (Zn),gallium (Ga), tin (Sn), or indium (In), and indium-gallium-zinc oxide(InGaZnO4), indium-zinc oxide (Zn—In—O), zinc tin oxide (Zn—Sn—O),indium-gallium oxide (In—Ga—O), indium-tin oxide (In—Sn—O),indium-zirconium oxide (In—Zr—O), indium-zirconium-zinc oxide(In—Zr—Zn—O), indium-zirconium-tin oxide (In—Zr—Sn—O),indium-zirconium-gallium oxide (In—Zr—Ga—O), indium aluminum oxide(In—Al—O), indium-zinc-aluminum oxide (In—Zn—Al—O), indium-tin-aluminumoxide (In—Sn—Al—O), indium-aluminum-gallium oxide (In—Al—Ga—O),indium-tantalum oxide (In—Ta—O), indium-tantalum-zinc oxide(In—Ta—Zn—O), indium-tantalum-tin oxide (In—Ta—Sn—O),indium-tantalum-gallium oxide (In—Ta—Ga—O), indium-germanium oxide(In—Ge—O), indium-germanium-zinc oxide (In—Ge—Zn—O),indium-germanium-tin oxide (In—Ge—Sn—O), indium-germanium-gallium oxide(In—Ge—Ga—O), titanium-indium-zinc oxide (Ti—In—Zn—O), orhafnium-indium-zinc oxide (Hf—In—Zn—O) which is a compound oxidethereof. In the case where the semiconductor 130 is made of the oxidesemiconductor material, a separate passivation layer for protecting theoxide semiconductor material, which may be vulnerable to an externalenvironment such as a high temperature, may be added.

The semiconductor 130 may include a channel 131 that is doped with anN-type impurity or a P-type impurity, and a source doping part and adrain doping part that are formed at respective sides of the channel anddoped with an opposite-type doping impurity to the doping impurity dopedon the channel. In the exemplary embodiment, the source doping part andthe drain doping part may correspond to the source electrode and thedrain electrode, respectively. The source electrode and the drainelectrode formed in the semiconductor 130 may be formed by doping onlythe corresponding regions. Further, in the semiconductor 130, a regionbetween source electrodes and drain electrodes of different transistorsmay be doped. Thus, the source electrode and the drain electrode may beelectrically connected to each other.

As illustrated in FIG. 4, the channel 131 formed in the semiconductor130 may include a driving channel 131 a formed in the drive transistorT1, a switching channel 131 b formed in the switching transistor T2, acompensation channel 131 c formed in the compensation transistor T3, aninitialization channel 131 d formed in the initialization transistor T4,an operation control channel 131 e formed in the operation controltransistor T5, and a light emission control channel 131 f formed in thelight emission control transistor T6. Also, a first storage electrode132 and a first boosting electrode 133 may be formed in thesemiconductor 130.

The driving transistor T1 may include the driving channel 131 a, adriving gate electrode 155 a, the driving source electrode 136 a, and adriving drain electrode 137 a. The driving gate electrode 155 a mayoverlap with the driving channel 131 a. The driving source electrode 136a and the driving drain electrode 137 a may be formed close by atrespective sides of the driving channel 131 a. The driving gateelectrode 155 a may be connected to a driving connecting member 174through a contact hole 61.

The switching transistor T2 may include the switching channel 131 b, aswitching gate electrode 155 b, a switching source electrode 136 b, anda switching drain electrode 137 b. The switching gate electrode 155 b,which is a part of the scan line 151, may overlap with the switchingchannel 131 b. The switching source electrode 136 b and the switchingdrain electrode 137 b may be formed close by at respective sides of theswitching channel 131 b. The switching source electrode 136 b may beconnected with the data line 171 through a contact hole 62.

The compensation transistor T3 may include the compensation channel 131c, a compensation gate electrode 155 c, a compensation source electrode136 c, and a compensation drain electrode 137 c. Two compensationtransistors T3 may be formed in order to help prevent the leakagecurrent, and two compensation gate electrodes 155 c may be protrusionsthat extend downwardly from the scan line 151. The compensation gateelectrode 155 c may overlap the compensation channel 131 c. Thecompensation source electrode 136 c and the compensation drain electrode137 c may be respectively formed to be adjacent to both sides of thecompensation channel 131 c. The compensation drain electrode 137 c maybe connected to the driving connecting member 174 through a contact hole63.

The initialization transistor T4 may include the initialization channel131 d, an initialization gate electrode 155 d, an initialization sourceelectrode 136 d, and an initialization drain electrode 137 d. Twoinitialization transistors T4 may be formed in order to help prevent theleakage current, and two initialization gate electrodes 155 d may beprotrusions that extend downwardly from the previous scan line 152. Theinitialization gate electrode 155 d may overlap the initializationchannel 131 d. The initialization source electrode 136 d and theinitialization drain electrode 137 d may be respectively formed to beadjacent to both sides of the initialization channel 131 d. Theinitialization source electrode 136 d may be connected to aninitialization connecting member 175 through a contact hole 64, and theinitialization drain electrode 137 d may be connected to the drivingconnecting member 174 through the contact hole 63.

The operation control transistor T5 may include the operation controlchannel 131 e, an operation control gate electrode 155 e, an operationcontrol source electrode 136 e, and an operation control drain electrode137 e. The operation control gate electrode 155 e may be a protrusionthat extends upwardly from the light emission control line 153. Theoperation control gate electrode 155 c may overlap with the operationcontrol channel 131 e. The operation control source electrode 136 e andthe operation control drain electrode 137 e may be formed close by atrespective sides of the operation control channel 131 e. The operationcontrol source electrode 136 e may be connected with a part of thedriving voltage line 172 through a contact hole 65.

The light emission control transistor T6 may include the light emissioncontrol channel 131 f, a light emission control gate electrode 155 f, alight emission control source electrode 136 f, and a light emissioncontrol drain electrode 137 f. The light emission control gate electrode155 f may be a protrusion that extends upwardly from the light emissioncontrol line 153 and overlaps with the light emission control channel131 f. The emission control source electrode 136 f and the emissioncontrol drain electrode 137 f may be formed close by at respective sidesof the emission control channel 131 f. The light emission control drainelectrode 137 f may be connected with an emission control connectingmember 179 through a contact hole 66.

The driving source electrode 136 a may be connected to the switchingdrain electrode 137 b and the operation control drain electrode 137 e,and the driving drain electrode 137 a may be connected to thecompensation source electrode 136 c and the light emission controlsource electrode 136 f.

The storage capacitor Cst may include a first storage electrode 132 anda second storage electrode 156 disposed with a gate insulating layer 140interposed therebetween. The gate insulating layer 140 may function as adielectric material, and a storage capacitance may be determined by acharge charged to the storage capacitor Cst and a voltage between bothelectrodes 132 and 156.

The first storage electrode 132 may be formed with the same layer as thechannel 131, and the second storage electrode 156 may be formed with thesame layer as the scan line 151, the previous scan line 152, and thelight emission control line 153. The first storage electrode 132 mayinclude a doping impurity.

The first storage electrode 132 may be formed between the compensationdrain electrode 177 c and the initialization drain electrode 177 d, andmay be connected to the driving gate electrode 155 a through the firstboosting electrode 133 and the driving connecting member 174. The secondstorage electrode 156 may be connected to the driving voltage line 172through a contact hole 69.

The storage capacitor Cst may store a storage capacitance correspondingto a difference between the driving voltage ELVDD transferred to thesecond storage electrode 156 through the driving voltage line 172 andthe gate voltage Vg of the driving gate electrode 155 a.

The first boosting electrode 133 of the boosting capacitor Cb may be anextension that extends from the first storage electrode 132. A secondboosting electrode 157 may be a protrusion that extends upwardly fromthe scan line 151. The boosting capacitor Cb may perform a boostingoperation increasing the gate voltage Vg of the driving gate electrode155 a according to the change of the scan signal Sn of the scan line 151to improve the driving range, thereby providing an accurate degree ofgrayness.

The driving connecting member 174 may be formed with the same layer asthe data line 171. One end of the driving connecting member 174 may beconnected to the driving gate electrode 155 a through the contact hole61. The other end of the driving connecting member 174 may be connectedto the compensation drain electrode 137 c of the compensation transistorT3 through the contact hole 63. Accordingly, the driving connectingmember 174 may connect the driving gate electrode 155 a and thecompensation drain electrode 137 c of the compensation transistor T3 toeach other.

The initialization connecting member 175 may have a quadrangle shape andmay be connected to the initialization voltage line 154 through acontact hole 67. A light emission control connecting member 179 having aquadrangle shape may be connected to the pixel electrode 191 of theorganic light emitting diode OLD through a contact hole 81. In anexemplary embodiment shown in FIG. 3 and FIG. 4, the initializationvoltage line may have a straight line shape parallel to the scan line,and the pixel electrode may have an approximate quadrangle shapecovering most of the pixel. In other implementations, the shape of thepixel electrode, the initialization voltage line, the initializationconnecting member, and the light emission control connecting member maybe variously changed.

An organic emission layer 370 may be formed on the pixel electrode 191.The organic emission layer 370 may include a pixel emission layer 371and a common emission layer 372. The pixel emission layer 371 may beformed only in a pixel of a corresponding color. However, the commonemission layer 372 may be commonly formed in all pixels. For example,the common emission layer 372 as an emission layer of blue may be formedon the red pixel and the green pixel as well as on the blue pixel. Acommon electrode 270 may be formed on the organic emission layer 370.The common electrode 270 may include an auxiliary common electrode 272and a main common electrode 271 that are sequentially deposited.

As shown in FIG. 5, a plurality of pixel electrodes 191 may be disposedapproximately in a matrix in the pixel area P1, and the auxiliaryelectrode 192 may be formed with a mesh structure at the pixel edge areaP2 between the pixel electrodes 191. The auxiliary electrode 192 may beconnected with the common electrode 270 to reduce resistance of thecommon electrode 270, thereby helping to prevent a voltage drop of thecommon electrode 270.

A structure of the common contact portion A positioned at the pixel edgearea P2 and connecting the auxiliary electrode 192 and the commonelectrode 270 to each other will be described in detail with referenceto FIG. 6.

As shown in FIG. 6, the auxiliary electrode 192 may be divided into afirst auxiliary electrode 192 a and a second auxiliary electrode 192 b.A barrier member 9 may be formed at a position corresponding to an endof the auxiliary electrode 192. The barrier member 9 may include a firstbarrier member 59 and a second barrier member 79. The end of theauxiliary electrode 192 may be positioned to be higher than otherportions of the auxiliary electrode 192 by being formed on the barriermember 9.

The auxiliary common electrode 272 and the common emission layer 372together have a common contact hole 72 that exposes the auxiliaryelectrode 192. The main common electrode 271 may be connected with theauxiliary electrode 192 through the common contact hole 72 and anauxiliary opening 352.

Hereinafter, the cross-sectional structure of the organic light emittingdiode display device according to an exemplary embodiment will bedescribed in detail according to a stacking order with reference FIG. 7,FIG. 8, and FIG. 9.

In this case, the stacked structures of the operation control transistorT5 may be mostly the same as that of the light emission controltransistor T6. Accordingly, a detailed description the same featureswill not be repeated.

A buffer layer 120 may be formed on a substrate 110. The substrate 110may be an insulating substrate formed of an insulating material such asglass, crystal, ceramic, or plastic. The buffer layer 120 may blockimpurities from the insulating substrate 110 during a crystallizationprocess for forming a polycrystalline semiconductor and may serve toimprove characteristics of the polycrystalline semiconductor and reducestress applied to the insulating substrate 110. The buffer layer 120 maybe formed of a silicon nitride (SiNx) or a silicon oxide (SiOx).

A semiconductor 130, including a driving channel 131 a, a switchingchannel 131 b, a compensation channel 131 c, an initialization channel131 d, an operation control channel 131 e, a light emission controlchannel 131 f, a first storage electrode 132, and a first boostingelectrode 133, may be formed on the buffer layer 120 of the pixel areaP1. A driving source electrode 136 a and a driving drain electrode 137 amay be formed on respective sides of the driving channel 131 a in thesemiconductor 130, and a switching source electrode 136 b and aswitching drain electrode 137 b may be formed on respective sides of theswitching channel 131 b. The compensation source electrode 136 c and thecompensation drain electrode 137 c may be formed at both sides of thecompensation channel 131 c, and the initialization source electrode 136d and the initialization drain electrode 137 d may be formed at bothsides of the initialization channel 131 d. The operation control sourceelectrode 136 e and the operation control drain electrode 137 e may beformed at both sides of the operation control channel 131 e, and thelight emission control source electrode 136 f and the light emissioncontrol drain electrode 137 f may be formed at both sides of the lightemission control channel 131 f. The first storage electrode 132 and thefirst boosting electrode 133 may be formed between the compensationdrain electrode 137 c and the initialization drain electrode 137 d.

A gate insulating layer 140 covering the semiconductor 130 may be formedthereon. The gate insulating layer 140 may be formed of a siliconnitride (SiNx) or a silicon oxide (SiOx).

A scan line 151, including a switching gate electrode 155 b and acompensation gate electrode 155 c, a previous scan line 152, aninitialization gate electrode 155 d, a light emission control line 153including an operation control gate electrode 155 e and a light emissioncontrol gate electrode 155 f, a driving gate electrode 155 a, a secondstorage electrode 156, and a second boosting electrode 157 may be formedon the gate insulating layer 140. A pair of first barrier members 59 maybe formed on the gate insulating layer 140 positioned in the pixel edgearea P2.

The gate wires 151, 152, 153, 155 a, 156, 157, and 59 may be formed as amultilayer in which a metal layer including one of copper (Cu), a copperalloy, aluminum (Al), an aluminum alloy, molybdenum (Mo), and amolybdenum alloy is deposited.

An interlayer insulating layer 160 covering the gate insulating layer140 and the gate wires 151, 152, 153, 155 a, 156, 157, and 59 may beformed thereon. The interlayer insulating layer 160 may be formed of asilicon nitride (SiNx) or a silicon oxide (SiOx).

A data line 171, a driving voltage line 172, a driving connecting member174, and initialization connecting member 175, and a light emissioncontrol connecting member 179 may be formed on the interlayer insulatinglayer 160.

A pair of second barrier members 79 may be formed on the interlayerinsulating layer 160 positioned in the pixel edge area P2. The secondbarrier members 79 may overlap the first barrier member 59. The secondbarrier members 79 may cover all of the first barrier member 59. Thefirst barrier member 59 and the second barrier member 79 may togetherform the barrier member 9.

The data wires 171, 172, 174, 175, 179, and the second barrier members79 may be formed of a multilayer in which a metal layer including one ofcopper (Cu), a copper alloy, aluminum (Al), an aluminum alloy,molybdenum (Mo), and a molybdenum alloy is deposited, and may be formedof a triple layer of, for example, titanium/aluminum/titanium(Ti/Al/Ti), molybdenum/aluminum/molybdenum (Mo/Al/Mo), ormolybdenum/copper/molybdenum (Mo/Cu/Mo).

The data line 171 may be connected to the switching source electrode 136b through the contact hole 62 formed while having the same boundary linein the gate insulating layer 140 and the interlayer insulating layer160. One end of the driving connecting member 174 may be connected tothe driving gate electrode 155 a through the contact hole 61 formed inthe interlayer insulating layer 160, and the other end of the drivingconnecting member 174 may be connected to the compensation drainelectrode 137 c through the contact hole 63 formed while having the sameboundary line in the gate insulating layer 140 and the interlayerinsulating layer 160.

One end of the initialization connecting member 175 may be connected tothe initialization source electrode 136 d through the contact hole 64formed in the gate insulating layer 140 and the interlayer insulatinglayer 160. The other end of the initialization connecting member 175 maybe connected to the initialization voltage line 154 through the contacthole 67 formed in the interlayer insulating layer 160. The lightemission control connecting member 179 may be connected to the lightemission control drain electrode 137 f through the contact hole 66formed in the gate insulating layer 140 and the interlayer insulatinglayer 160.

A passivation layer 180 covering the data wires 171, 172, 174, and 179,the second barrier members 79, and the interlayer insulating layer 160may be formed thereon. The passivation layer 180 may cover the datawires 171, 172, 174, and 179 for planarization such that the pixelelectrode 191 may be formed on the passivation layer 180 without a step.

The passivation layer 180 positioned at the pixel edge area P2 mayinclude a protection opening 82 exposing the barrier member 9.

The passivation layer 180 may be formed of an organic material such as apolyacryl-based resin or a polyimide-based resin, or may be a depositionlayer of the organic material and an inorganic material.

A pixel electrode 191 and an auxiliary electrode 192 are formed on thepassivation layer 180. The light emission control connecting member 179may be connected to the pixel electrode 191 through the contact hole 81formed on the passivation layer 180. The auxiliary electrode 192 may bedivided into a first auxiliary electrode 192 a and a second auxiliaryelectrode 192 b. The ends of the first auxiliary electrode 192 a and thesecond auxiliary electrode 192 b may be positioned respectivelycorresponding to a pair of barrier members 9. The ends of the firstauxiliary electrode 192 a and the second auxiliary electrode 192 b maybe directly connected with a pair of barrier members 9 exposed throughthe protection opening 82.

A pixel definition layer PDL 350 may be formed on the passivation layer180, the auxiliary electrode 192, and the edge of the pixel electrode191, and the pixel definition layer 350 may include a pixel opening 351that exposes the pixel electrode 191 and an auxiliary opening 352 thatexposes the end of the auxiliary electrode 192. The barrier member 9 maybe positioned at the auxiliary opening 352 of the pixel definition layer350. By maximally expanding the auxiliary opening 352, the step of thecommon emission layer 372, the auxiliary common electrode 272, and themain common electrode 271 formed on the pixel definition layer 350 maybe minimized such that the contact between the main common electrode andthe auxiliary electrode 192 may be facilitated.

The pixel definition layer 350 may be made of the organic material suchas a polyacrylate resin and a polyimide resin, or a silica-seriesinorganic material.

An organic emission layer 370 may be formed on the pixel electrode 191exposed on the pixel opening 351, and the organic emission layer 370 mayinclude a pixel emission layer 371 formed in the pixel area P1 and acommon emission layer 372 formed to the pixel edge area P2. A commonelectrode 270 may be formed on the organic emission layer 370. Thecommon electrode 270 may include an auxiliary common electrode 272 inthe pixel area P1 and the portion of the pixel edge area P2, and a maincommon electrode 271 formed over the entire surface including the pixelarea P1 and the pixel edge area P2.

The common emission layer 372 and the auxiliary common electrode 272together may have a common contact hole 72 exposing the end of theauxiliary electrode 192. The main common electrode 271 may be directlyconnected with the auxiliary electrode 192 exposed through the commoncontact hole 72 and the auxiliary opening 352. Accordingly, theresistance of the common electrode 270 may be reduced, thereby helpingto prevent a voltage drop of the common electrode 270.

An organic light emitting diode OLD is formed to include includes thepixel electrode 191, the organic emission layer 370, and the commonelectrode 270. The pixel electrode 191 may be an anode, which is a holeinjection electrode, and the common electrode 270 may be a cathode,which is an electron injection electrode. In other implementations, thepixel electrode 191 may be the cathode, and the common electrode 270 maybe the anode according to a driving method of the organic light emittingdiode display. When holes and electrons are injected into the organicemission layer 370 from the pixel electrode 191 and the common electrode270, respectively, and excitons acquired by combining the injected holesand electrons fall from an excitation state to a ground state, light isemitted.

The pixel emission layer 371 and the common emission layer 372 may bemade of a low-molecular organic material or a high-molecular organicmaterial such as poly(3,4-ethylenedioxythiophene) (PEDOT). The organicemission layer 370 may be formed with multiple layers including at leastone of an emission layer, a hole injection layer (HIL), a holetransporting layer (HTL), an electron transporting layer (ETL), and anelectron injection layer (EIL). When the organic emission layer 370includes all of the layers, the hole injection layer may be disposed onthe pixel electrode 191 which is the positive electrode, and the holetransporting layer, the emission layer, the electron transporting layer,and the electron injection layer may be sequentially laminated thereon.

The pixel emission layer 371 may include a red organic emission layeremitting red light and a green organic emission layer emitting greenlight. The common emission layer 372 may include a blue organic emissionlayer emitting blue light. The red organic emission layer and the blueorganic emission layer may be formed together in the red pixel, thegreen organic emission layer and the blue organic emission layer may beformed together in the green pixel, and the blue organic emission layermay be formed in the blue pixel, thereby realizing a color image.

An encapsulation member protecting the organic light emitting diode OLDmay be formed on the common electrode 270. The encapsulation member maybe sealed to the substrate 110 by a sealant and may be formed of variousmaterials such as glass, quartz, ceramic, plastic, or a metal. In someimplementations, a thin film encapsulation layer may be formed on thecommon electrode 270 by depositing an inorganic layer and an organiclayer with the usage of a sealant.

A manufacturing method of the organic light emitting diode displayaccording to an exemplary embodiment will be described with reference toaccompanying drawings.

FIG. 10 and FIG. 12 illustrate layout views sequentially showing amanufacturing method of an organic light emitting diode displayaccording to an exemplary embodiment, FIG. 11 illustrates across-sectional view taken along a line XI-XI of FIG. 10, and FIG. 13illustrates a cross-sectional view taken along a line XIII-XIII of FIG.12.

As shown in FIG. 7, FIG. 8, FIG. 10, and FIG. 11, the buffer layer 120may be formed on the substrate 110. The buffer layer 120 may be formedof a single layer of a silicon nitride or a laminate layer of a siliconnitride and a silicon oxide, and may be deposited on an entire surfaceof the substrate 110 by a method such as plasma enhanced chemical vapordeposition (PECVD). The semiconductor layer may be formed on the bufferlayer 120. The semiconductor layer may be formed of polysilicon or anoxide semiconductor. The polysilicon may be formed by a method offorming an amorphous silicon layer and then crystallizing the layer.Various suitable methods may be applied as the crystallizing method. Forexample, the amorphous silicon layer may be crystallized by using heat,a laser, Joule heat, an electric field, a catalyst metal, or the like.The semiconductor layer may be an intrinsic semiconductor that is notdoped with the impurity. On the polycrystalline semiconductor layer, aphotolithography process may be performed by using a first mask, and thepolycrystalline semiconductor layer may be patterned as thesemiconductor 130. The semiconductor 130 is not doped at this time, andas a result, the semiconductor 130 is not yet divided into thesemiconductor, the source electrode, and the drain electrode configuringeach transistor. Channel doping having a low doping concentration may beperformed on the semiconductor 130 to make the semiconductor 130 into animpurity semiconductor.

Further, a gate insulating layer 140 covering the buffer layer 120 andthe semiconductor 130 may be formed thereon. The gate insulating layer140 may be formed of a silicon nitride (SiNx), a silicon oxide (SiOx),or the like, and may be deposited on an entire surface by a method suchas plasma enhanced chemical vapor deposition (PECVD). A gate metal layermay be deposited on the gate insulating layer 140. The gate metal layermay be patterned by the photolithography process using a second mask. Asa result, in the pixel area P1, a scan line 151, a previous scan line152, a light emission control line 153, a driving gate electrode 155 a,a second storage electrode 156, and a second boosting electrode 157 maybe formed. In the pixel edge area P2, a pair of first barrier members 59may be formed. The gate metal layer may be formed of a multilayer inwhich a metal layer including any one of copper (Cu), a copper alloy,aluminum (Al), and an aluminum alloy, and a metal layer including anyone of molybdenum (Mo) and a molybdenum alloy, are laminated.

Next, source and drain doping having a higher doping concentration thana channel doping is processed to the semiconductor 130. Thesemiconductor 130 may be source and drain doped in the exposed region,for example, a portion not covered by the switching gate electrode 155b, the compensation gate electrode 155 c, the initialization gateelectrode 155 d, the operation control gate electrode 155 e, the lightemission control gate electrode 155 f, and the driving gate electrode155 a. As a result, a source electrode and a drain electrode of eachtransistor may be formed, and a first storage electrode 132 and a firstboosting electrode 133 may be formed. A channel 131 of each transistormay be formed in the region that is not doped, or that is only lightlydoped, in the semiconductor 130. That is, the driving channel 131 a, theswitching channel 131 b, the compensation channel 131 c, theinitialization channel 131 d, the operation control channel 131 e, andthe light emission control channel 131 f may be simultaneously formed.As described above, a separate mask may be omitted when source and draindoping the semiconductor 130.

Next, an interlayer insulating layer 160 covering the gate insulatinglayer 140, the scan line 151, the previous scan line 152, the lightemission control line 153, the driving gate electrode 155 a, the secondstorage electrode 156, the second boosting electrode 157, and a pair offirst barrier members 59 may be formed. The interlayer insulating layer160 may be formed of a silicon nitride (SiNx), a silicon oxide (SiOx),or the like, and may be deposited on an entire surface by a method suchas plasma enhanced chemical vapor deposition (PECVD). A dopantactivation process may be performed to place the impurity doped in thesemiconductor 130 and to remove any damage at the boundary between thesemiconductor 130 and the gate insulating layer 140.

The gate insulating layer 140 and the interlayer insulating layer 160may be patterned to form a plurality of contact holes 61, 62, 63, 64,65, 66, 67, and 69 by the photolithography process using a third mask.

Next, a data metal layer may be formed on the interlayer insulatinglayer 160. The data metal layer may be formed as a multilayer where ametal layer including any one of copper, a copper alloy, aluminum, andan aluminum alloy, and a metal layer including any one of molybdenum anda molybdenum alloy, are laminated. For example, the data metal layer maybe formed of a triple layer of titanium/aluminum/titanium (Ti/Al/Ti), ora triple layer of molybdenum/aluminum/molybdenum (Mo/Al/Mo) ormolybdenum/copper/molybdenum (Mo/Cu/Mo). The data metal layer may bepatterned by a photolithography process using a fourth mask.Accordingly, a data line 171, a driving voltage line 172, a drivingconnecting member 174, an initialization connecting member 175, and alight emission control connecting member 179 may be formed on theinterlayer insulating layer 160 of the pixel area P1, and a pair ofsecond barrier members 79 may be formed on the interlayer insulatinglayer 160 of the pixel edge area P2.

A passivation layer 180 may be formed on the interlayer insulating layer160 and may be patterned by a photolithography process using a fifthmask to form a contact hole 81 in the passivation layer 180 positionedin the pixel area P1 and to form a protection opening 82 exposing abarrier member 9 in the passivation layer 180 positioned in the pixeledge area P2.

A pixel electrode layer may be formed on the passivation layer 180 andmay be patterned by a photolithography process using a sixth mask.Accordingly, a pixel electrode 191 connected to the light emissioncontrol connecting member 179 through the contact hole 81 may be formedon the passivation layer 180 of the pixel area P1. An auxiliaryelectrode 192 contacting the barrier member 9 through the protectionopening 82 of the pixel edge area P2 may be formed.

A pixel definition layer 350 covering the pixel electrode 191 and theauxiliary electrode 192 may be formed on the passivation layer 180. Apixel opening 351 exposing a portion of the pixel electrode 191 may beformed in the pixel definition layer 350 positioned at the pixel area P1by using a seventh mask. An auxiliary opening 352 exposing the end ofthe auxiliary electrode 192 may be formed in the pixel definition layer350 positioned at the pixel edge area P2.

A pixel emission layer 371 may be formed on the pixel electrode 191exposed through the pixel opening 351 of the pixel definition layer 350,and a common emission layer 372 may be formed on the pixel emissionlayer 371 and the pixel definition layer 350. An auxiliary commonelectrode 272 may be formed on the common emission layer 372. The commonemission layer 372 and the auxiliary common electrode 272 positioned onthe barrier member 9 may be formed to be higher than other portions ofthe common emission layer 372 and the auxiliary common electrode 272,and a thickness t2 of the common emission layer 372 and the auxiliarycommon electrode 272 positioned on the barrier member 9 may be formed tobe thinner than the thickness t1 of the other portions.

As shown in FIG. 12 and FIG. 13, a breakdown voltage line BVL may beconnected between the first auxiliary electrode 192 a and the secondauxiliary electrode 192 b that are electrically separated to apply abreakdown voltage. The breakdown voltage may be retained between thefirst auxiliary electrode 192 a and the auxiliary common electrode 272,and the breakdown voltage may also also retained between the secondauxiliary electrode 192 b and the auxiliary common electrode 272. Whenthe thickness t2 of the common emission layer 372 and the auxiliarycommon electrode 272 positioned on a pair of barrier members 9 isthinner than the thickness t1 of the other portion, the common emissionlayer 372 and the auxiliary common electrode 272 may be easily removedby the discharge due to the breakdown voltage, thereby forming a commoncontact hole 72. The end of the auxiliary electrode 192 may be exposedthrough the common contact hole 72. By forming the auxiliary electrode192, the common emission layer 372 and the auxiliary common electrode272 at a position to overlap the barrier member 9, the common emissionlayer 372 and the auxiliary common electrode 272 formed with the thinthickness may be easily removed by the discharge due to the breakdownvoltage.

As shown in FIG. 6 and FIG. 9, a main common electrode 271 may be formedon the auxiliary common electrode 272. The main common electrode 271 maybe directly connected with the auxiliary electrode 192 exposed throughthe common contact hole 72 and the auxiliary opening 352 such that theresistance of the common electrode 270 may be reduced, thereby helpingto prevent the voltage drop of the common electrode 270. The main commonelectrode 271 may be formed throughout the entire region including theposition corresponding to the pixel definition layer 350 such that useof a separate mask may be omitted.

In the manufacturing method according to the exemplary embodiment, thefirst auxiliary electrode 192 a and the second auxiliary electrode 192 bmay be electrically separated from each other such that the breakdownvoltage is applied therebetween. In other implementations of themanufacturing method, the first auxiliary electrode 192 a and the secondauxiliary electrode 192 b may be connected to each other in anequipotential state from the outside, and the breakdown voltage may beapplied between the auxiliary common electrode 272 and the auxiliaryelectrode 192.

FIG. 14 illustrates a cross-sectional view, taken along a line XIII-XIIIof FIG. 12, of a manufacturing method of an organic light emitting diodedisplay according to another exemplary embodiment.

The manufacturing method shown in FIG. 14 may be substantially the sameas the manufacturing method according to an exemplary embodiment shownin FIG. 13, except that the first auxiliary electrode 192 a and thesecond auxiliary electrode 192 b are connected to each other in anequipotential state from the outside.

As shown in FIG. 8 and FIG. 14, in the current manufacturing method ofthe organic light emitting diode display according to an exemplaryembodiment, the pixel emission layer 371 may be formed on the pixelelectrode 191 exposed through the pixel opening 351 of the pixeldefinition layer 350, and a common emission layer 372 may be formed onthe pixel emission layer 371 and the pixel definition layer 350. Anauxiliary common electrode 272 may be formed on the common emissionlayer 372. As shown in FIG. 14, the first auxiliary electrode 192 a andthe second auxiliary electrode 192 b may be connected to each other inan equipotential state by using an equipotential line SVL. The breakdownvoltage may be applied by connecting a breakdown voltage line BVLbetween the auxiliary electrode 192 and the auxiliary common electrode272. In this case, when the thickness t2 of the common emission layer372 and the auxiliary common electrode 272 positioned on a pair ofbarrier members 9 is thinner than the thickness t1 of other portions ofthe common emission layer 372 and the auxiliary common electrode 272,the common emission layer 372 and the auxiliary common electrode 272positioned on the pair of barrier members 9 may be easily removed by thedischarge due to the breakdown voltage such that the common contact hole72 is formed. Accordingly, the ends of the auxiliary electrode 192 maybe exposed through the common contact hole 72. As described above, byforming the barrier member 9 at the position overlapping the auxiliaryelectrode 192, the common emission layer 372 and the auxiliary commonelectrode 272 formed on the auxiliary electrode 192 may be formed with athin thickness such that the common emission layer 372 and the auxiliarycommon electrode 272 may be easily removed by the discharge due to thebreakdown voltage.

As shown in FIG. 6 and FIG. 9, the main common electrode 271 may beformed on the auxiliary common electrode 272. The main common electrode271 may be directly connected with the auxiliary electrode 192 exposedthrough the common contact hole 72 and the auxiliary opening 352 suchthat the resistance of the common electrode 270 may be reduced, therebyhelping to prevent the voltage drop of the common electrode 270.

In an exemplary embodiment, the barrier member may overlap the auxiliaryelectrode. In other implementations, the barrier member may bepositioned between the first auxiliary electrode and the secondauxiliary electrode.

FIG. 15 illustrates a detailed layout view of an organic light emittingdiode display according to another exemplary embodiment corresponding toa portion A of FIG. 5, and FIG. 16 illustrates a cross-sectional viewtaken along a line XVI-XVI of FIG. 15.

The exemplary embodiment shown in FIG. 15 and FIG. 16 is substantiallythe same as the exemplary embodiment shown in FIG. 1 to FIG. 11 exceptthat the barrier member is positioned between the first auxiliaryelectrode and the second auxiliary electrode.

As shown in FIG. 15 and FIG. 16, in the organic light emitting diodedisplay according to the current exemplary embodiment, the buffer layer120 may be formed on the substrate 110 positioned at the pixel edge areaP2, and the gate insulating layer 140 is formed on the buffer layer 120.A first barrier member 59 may be formed on the gate insulating layer140, and an interlayer insulating layer 160 may be formed on the firstbarrier member 59 and the gate insulating layer 140. A second barriermember 79 may be formed at the position overlapping the first barriermember 59 on the interlayer insulating layer 160. The first barriermember 59 and the second barrier member 79 form a barrier member 9together. A passivation layer 180 may be formed on the interlayerinsulating layer 160. The passivation layer 180 positioned at the pixeledge area P2 may have a protection opening 82 exposing the barriermember 9. An auxiliary electrode 192 may be formed on the passivationlayer 180. The auxiliary electrode 192 may be separated into a firstauxiliary electrode 192 a and a second auxiliary electrode 192 b. Thebarrier member 9 may be positioned between the first auxiliary electrode192 a and the second auxiliary electrode 192 b. A pixel definition layer350 covering the auxiliary electrode 192 positioned on the pixel edgearea P2 is formed thereon. The pixel definition layer 350 may include anauxiliary opening 352 exposing the end of the auxiliary electrode 192and the barrier member 9.

A common electrode 270 may be formed on the common emission layer 372formed to the pixel edge area P2. The common electrode 270 may includean auxiliary common electrode 272 formed in the pixel area P1 and theportion of the pixel edge area P2, and a main common electrode 271formed on the entire surface including the pixel area P1 and the pixeledge area P2.

The common emission layer 372 and the auxiliary common electrode 272 mayhave a common contact hole 72 exposing the end of the auxiliaryelectrode 192 together. When the main common electrode 271 is directlyconnected with the auxiliary electrode 192 exposed by the common contacthole 72 and the auxiliary opening 352, the resistance of the commonelectrode 270 may be reduced, thereby helping to prevent a voltage dropof the common electrode 270.

A manufacturing method of the organic light emitting diode displayaccording to another exemplary embodiment will be described withreference to accompanying drawings.

FIG. 17 illustrates a layout view showing a stage of a manufacturingmethod of an organic light emitting diode display according to anotherexemplary embodiment, and FIG. 18 is a cross-sectional view taken alonga line XVIII-XVIII of FIG. 17.

The manufacturing method of the organic light emitting diode displayaccording to the exemplary embodiment shown in FIG. 17 and FIG. 18 issubstantially the same as the manufacturing method of the organic lightemitting diode display according to an exemplary embodiment shown inFIG. 7, FIG. 8, FIG. 9, FIG. 10, FIG. 11, FIG. 12, and FIG. 13, exceptthat the barrier member is formed between the first auxiliary electrodeand the second auxiliary electrode.

First, as shown in FIG. 7, FIG. 8, FIG. 10, and FIG. 11, the bufferlayer 120 may be formed on the substrate 110, and the semiconductorlayer may be formed on the buffer layer 120. The semiconductor layer mayundergo a photolithography process using the first mask, such that thesemiconductor layer may be patterned into the semiconductor 130. Thegate insulating layer 140 covering the buffer layer 120 and thesemiconductor 130 may be formed thereon. The gate metal layer may bedeposited on the gate insulating layer 140. The gate metal layer may bepatterned through the photolithography process using the second mask. Asa result, the first barrier member 59 may be formed in the pixel edgearea P2. The source and drain doping having the higher dopingconcentration than the channel doping may be performed to thesemiconductor 130. The interlayer insulating layer 160 covering the gateinsulating layer 140 and the first barrier member 59 may be formedthereon. The gate insulating layer 140 and the interlayer insulatinglayer 160 may be patterned by a photolithography process using the thirdmask to form a plurality of contact holes 61, 62, 63, 64, 65, 66, 67,and 69 in the pixel area P1. The data metal layer may be formed on theinterlayer insulating layer 160. The data metal layer may be patternedby the photolithography process using the fourth mask. Accordingly, thesecond barrier member 79 may be formed on the pixel edge area P2 of theinterlayer insulating layer 160. The passivation layer 180 may be formedon the interlayer insulating layer 160, and the protection opening 82exposing the barrier member 9 may be formed in the passivation layer 180positioned at the pixel edge area P2 by the photolithography processusing the fifth mask. The pixel electrode layer may be formed on thepassivation layer 180 and patterned by the photolithography processusing the sixth mask. The first auxiliary electrode 192 a and the secondauxiliary electrode 192 b positioned at both sides via the barriermember 9 may be formed in the pixel edge area P2.

The pixel definition layer 350 covering the auxiliary electrode 192 maybe formed on the passivation layer 180. The auxiliary opening 352exposing the end of the auxiliary electrode 192 may be formed in thepixel definition layer 350 positioned at the pixel edge area P2 by usingthe seventh mask. The pixel emission layer 371 may be formed on thepixel electrode 191 exposed through the pixel opening 351 of the pixeldefinition layer 350, and the common emission layer 372 may be formed onthe pixel emission layer 371 and the pixel definition layer 350. Theauxiliary common electrode 272 may be formed on the common emissionlayer 372. The common emission layer 372 and the auxiliary commonelectrode 272 positioned on the barrier member 9 may be positioned at ahigher height than other portions. Accordingly, the thickness t2 of thecommon emission layer 372 and the auxiliary common electrode 272positioned on the barrier member 9 may be formed with a thinnerthickness t1 than the other portions.

Next, as shown in FIG. 17 and FIG. 18, the breakdown voltage line BVLmay be connected between the first auxiliary electrode 192 a and thesecond auxiliary electrode 192 b that are electrically separated fromeach other to apply the breakdown voltage. Thus, the breakdown voltagemay be retained between the first auxiliary electrode 192 a and theauxiliary common electrode 272, and the breakdown voltage may also beretained between the second auxiliary electrode 192 b and the auxiliarycommon electrode 272. In this case, the thickness t2 of the commonemission layer 372 and the auxiliary common electrode 272 positioned onthe barrier member 9 may be thinner than the thickness t1 of the otherportions such that the common emission layer 372 and the auxiliarycommon electrode 272 positioned on the barrier member 9 may be easilyremoved by the discharge due to the breakdown voltage, thereby formingthe common contact hole 72. The end of the auxiliary electrode 192 maybe exposed through the common contact hole 72. As described above, byforming the barrier member 9 at the position overlapping the auxiliaryelectrode 192, the common emission layer 372 and the auxiliary commonelectrode 272 may be formed on the auxiliary electrode 192 to have athin thickness. Accordingly, the common emission layer 372 and theauxiliary common electrode 272 may be easily removed by the dischargedue to the breakdown voltage.

In other implementations, a third barrier member may be formed betweenthe first barrier member and the second barrier member.

FIG. 19 illustrates a view of a plurality of transistors and a capacitorof an organic light emitting diode display according to anotherexemplary embodiment FIG. 20 illustrates a detailed layout view of FIG.19. FIG. 21 illustrates a detailed layout view corresponding to aportion A of FIG. 5 of the exemplary embodiment, FIG. 22 illustrates across-sectional view taken along a line XXII-XXII of FIG. 20, FIG. 23illustrates a cross-sectional view taken along a line XXIII-XXIII ofFIG. 20, and FIG. 24 illustrates a cross-sectional view taken along aline XXIV-XXIV of FIG. 21.

The exemplary embodiment shown in FIG. 19, FIG. 20, FIG. 21, FIG. 22,FIG. 23, and FIG. 24 is substantially the same as the exemplaryembodiment shown in FIG. 1 to FIG. 9 except for including a thirdbarrier member. Accordingly, a description of substantially similarfeatures will not be repeated.

As shown in FIG. 19, an organic light emitting diode display accordingto the current exemplary embodiment may include a scan line 151, aprevious scan line 152, a light emission control line 153, and a bypasscontrol line 158 respectively applying the scan signal Sn, the previousscan signal Sn−1, the light emission control signal EM, and the bypasssignal BP and formed in the row direction. In this case, a repair line159 for repairing may be disposed to be parallel to the scan line 151.

Also, a data line 171, a driving voltage line 172, and an initializationvoltage line 178 crossing the scan line 151, the previous scan line 152,the emission control line 153, and the bypass control line 158 andrespectively applying a data signal Dm, a driving voltage ELVDD, and aninitialization voltage Vint to the pixel PX may be further included. Inthis case, the initialization voltage Vint may be transmitted from theinitialization voltage line 178 to the compensation transistor T3 viathe initialization transistor T4.

Further, a driving thin film transistor T1, a switching thin filmtransistor T2, a compensation thin film transistor T3, an initializationthin film transistor T4, an operation control thin film transistor T5,an emission control thin film transistor T6, a bypass thin filmtransistor T7, a storage capacitor Cst, and an organic light emittingdiode OLD may be formed in the pixel PX. The organic light emittingdiode OLD may include a pixel electrode 191, an organic emission layer370, and a common electrode 270. The compensation transistor T3 and theinitialization transistor T4 may be configured as a dual gate structuretransistor in order to block a leakage current.

Channels of the driving transistor T1, the switching transistor T2, thecompensation transistor T3, the initialization transistor T4, theoperation control transistor T5, the light emission control transistorT6, and the bypass transistor T7 may be formed as one semiconductor 130connected thereto, and the semiconductor 130 may be formed to be curvedin various shapes. The semiconductor 130 may be made of apolycrystalline semiconductor material or an oxide semiconductormaterial.

As illustrated in FIG. 20, the channel 131 formed in the semiconductor130 may include a driving channel 131 a formed in the drive transistorT1, a switching channel 131 b formed in the switching transistor T2, acompensation channel 131 c formed in the compensation transistor T3, aninitialization channel 131 d formed in the initialization transistor T4,an operation control channel 131 e formed in the operation controltransistor T5, a light emission control channel 131 f formed in thelight emission control transistor T6, and a bypass channel 131 g formedin the bypass transistor T7.

The driving transistor T1 may include the driving channel 131 a, adriving gate electrode 155 a, the driving source electrode 136 a, and adriving drain electrode 137 a. The driving channel 131 a may be curvedand may have a meandering shape or a zigzag shape. As such, by formingthe curved driving channel 131 a, the driving channel 131 a may beformed to be elongated in a narrow space. Accordingly, a driving rangeof the driving gate-source voltage Vgs between the driving gateelectrode 155 a and the driving source electrode 136 a may be increasedby the elongated driving channel 131 a. When the driving range of thegate voltage is increased, a gray scale of light emitted from theorganic light emitting diode OLD may be finely controlled by changingthe magnitude of the gate voltage. As a result, the resolution of theorganic light emitting diode display device may be enhanced and displayquality may be improved. Various examples such as ‘reverse S’, ‘S’, ‘M’,and ‘W’ may be implemented by variously modifying the shape of thedriving channel 131 a.

The driving gate electrode 155 a may overlap with the driving channel131 a. The driving source electrode 136 a and the driving drainelectrode 137 a may be formed close by at respective sides of thedriving channel 131 a. The driving gate electrode 155 a may be connectedto a first driving connecting member 174 through a contact hole 61.

The switching transistor T2 may include the switching channel 131 b, aswitching gate electrode 155 b, a switching source electrode 136 b, anda switching drain electrode 137 b. The switching gate electrode 155 b,which is a part extended downward from the scan line 151, may overlapwith the switching channel 131 b. The switching source electrode 136 band the switching drain electrode 137 b may be formed close by atrespective sides of the switching channel 131 b. The switching sourceelectrode 136 b may be connected with the data line 171 through acontact hole 62.

The compensation transistor T3 may include the compensation channel 131c, a compensation gate electrode 155 c, a compensation source electrode136 c, and a compensation drain electrode 137 c.

Two compensation transistors T3 may be formed in order to prevent aleakage current. Two compensation gate electrodes 155 c may respectivelybe a portion of the scan line 151 and a protrusion extended upwardlyfrom the scan line 151. The compensation gate electrode 155 c mayoverlap the compensation channel 131 c. The compensation sourceelectrode 136 c and the compensation drain electrode 137 c may berespectively formed to be adjacent to both sides of the compensationchannel 131 c. The compensation drain electrode 137 c may be connectedto the driving connecting member 174 through a contact hole 63.

The initialization transistor T4 may include the initialization channel131 d, an initialization gate electrode 155 d, an initialization sourceelectrode 136 d, and an initialization drain electrode 137 d. Twoinitialization transistors T4 may be formed in order to prevent aleakage current. Two initialization gate electrodes 155 d mayrespectively be a portion of the previous scan line 152 and a protrusionextended downwardly from the previous scan line 152. The initializationgate electrode 155 d may overlap the initialization channel 131 d. Theinitialization source electrode 136 d and the initialization drainelectrode 137 d may be respectively formed to be adjacent to both sidesof the initialization channel 131 d. The initialization source electrode136 d may be connected to the initialization connecting member 175through a contact hole 64, and the initialization drain electrode 137 dmay be connected to the driving connecting member 174 through thecontact hole 63.

The operation control transistor T5 may include the operation controlchannel 131 e, an operation control gate electrode 155 e, an operationcontrol source electrode 136 e, and an operation control drain electrode137 e. The operation control gate electrode 155 e, which is a part ofthe light emission control line 153, may overlap with the operationcontrol channel 131 e. The operation control source electrode 136 e andthe operation control drain electrode 137 e may be formed close by atrespective sides of the operation control channel 131 e. The operationcontrol source electrode 136 e may be connected with a part of thedriving voltage line 172 through a contact hole 65.

The light emission control transistor T6 may include the light emissioncontrol channel 131 f, a light emission control gate electrode 155 f, alight emission control source electrode 136 f, and a light emissioncontrol drain electrode 137 f. The light emission control gate electrode155 f, which is a part of the light emission control line 153, mayoverlap with the light emission control channel 131 f. The emissioncontrol source electrode 136 f and the emission control drain electrode137 f may be formed close by at respective sides of the emission controlchannel 131 f. The light emission control drain electrode 137 f may beconnected with an emission control connecting member 179 through acontact hole 66.

The bypass transistor T7 may include the bypass channel 131 g, a bypassgate electrode 155 g, a bypass source electrode 136 g, and a bypassdrain electrode 137 g. The bypass gate electrode 155 g, which is a partof the bypass control line 158, may overlap with the bypass channel 131g. The bypass source electrode 136 g and the bypass drain electrode 137g may be formed close by at respective sides of the bypass channel 131g. The bypass source electrode 136 g may be connected to the emissioncontrol connecting member 179 through the emission control contact hole66, and the bypass drain electrode 137 g may be connected directly tothe initialization source electrode 136 d.

One end of the driving channel 131 a of the driving transistor T1 may beconnected to the switching drain electrode 137 b and the operationcontrol drain electrode 137 e, and the other end of the driving channel131 a may be connected to the compensation source electrode 136 c andthe emission control source electrode 136 f.

The storage capacitor Cst may include the first storage electrode 155 aand a second storage electrode 156, which are disposed with a secondinsulating layer 142 therebetween. The first storage electrode 155 a maycorrespond to the driving gate electrode 155 a, and the second storageelectrode 156 may be a portion extended from a storage line 1540, andoccupies a larger area than the driving gate electrode 155 a, and fullycovers the driving gate electrode 155 a. Herein, the second insulatinglayer 142 may be a dielectric material, and a storage capacitance may bedetermined by charges stored in the storage capacitor Cst and a voltagebetween the two electrodes 155 a and 156. As such, the driving gateelectrode 155 a may be used as the first storage electrode 155 a. It maybe possible to ensure a space in which the storage capacitor may beformed within a space narrowed by the driving channel 131 a having alarge area in the pixel.

The first storage electrode 155 a, which is also the driving gateelectrode 155 a, may be connected with one end of the first dataconnecting member 174 through the contact hole 61 and a storage opening51. The storage opening 51 may be formed in the second storage electrode156.

The first data connection member 174 may be formed on the same layer asand to be substantially parallel with the data line 171. Another end ofthe first data connection member 174 may be connected with the secondcompensation drain electrode 137 c of the second compensation transistorT3 and the second initialization drain electrode 137 d of the secondinitialization transistor T4 through the contact hole 63. Accordingly,the first data connection member 174 may connect the driving gateelectrode 155 a and the second compensation drain electrode 137 c of thesecond compensation transistor T3, and the second initialization drainelectrode 137 d of the second initialization transistor T4, to eachother.

The second storage electrode 156 may be connected with the drivingvoltage line 172 through a contact hole 69.

The storage capacitor Cst may store a storage capacitance correspondingto a difference between the driving voltage ELVDD transferred to thesecond storage electrode 156 through the driving voltage line 172 andthe gate voltage Vg of the driving gate electrode 155 a.

The initialization voltage line 178 extending to be parallel to the dataline 171 may be connected to the initialization source electrode 176 dthrough the contact hole 64.

The emission control connecting member 179 may have a quadrangle shapeand may be connected to the pixel electrode 191 through a contact hole81.

An organic emission layer 370 may be formed on the pixel electrode 191.The organic emission layer 370 may include a pixel emission layer 371and a common emission layer 372. The pixel emission layer 371 may beformed only in the pixel of a corresponding color. The common emissionlayer 372 may be commonly formed in all of the pixels. A commonelectrode 270 may be formed on the organic emission layer 370. Thecommon electrode 270 may include an auxiliary common electrode 272 and amain common electrode 271 that are sequentially deposited.

As shown in FIG. 5, a plurality of pixel electrode 191 may be disposedapproximately in to matrix at the pixel area P1. The auxiliary electrode192 may be formed in a mesh structure at the pixel edge area P2 betweenthe pixel electrodes 191. The auxiliary electrode 192 may be connectedwith the common electrode 270 to reduce the resistance of the commonelectrode 270, thereby preventing a voltage drop of the common electrode270. Next, a structure of the common contact portion A positioned at thepixel edge area P2 and connecting the auxiliary electrode 192 and thecommon electrode 270 to each other will be described in detail withreference to FIG. 21.

As shown in FIG. 21, the auxiliary electrode 192 may be divided into afirst auxiliary electrode 192 a and a second auxiliary electrode 192 b.A barrier member 9 may be formed at the position corresponding to an endof the auxiliary electrode 192. The barrier member 9 includes a firstbarrier member 59, a second barrier member 79, and a third barriermember 58. The third barrier member 58 may be formed between the firstbarrier member 59 and the second barrier member 79, and may overlap thefirst barrier member 59 and the second barrier member 79. The end of theauxiliary electrode 192 on the barrier member 9 may be formed to behigher compared with other portions of the auxiliary electrode 192. Forexample, the barrier member 9 may have a higher height than the barriermember 9 shown in FIG. 6 and FIG. 9. Accordingly, the common emissionlayer 372 and the auxiliary common electrode 272 formed on the auxiliaryelectrode 192 may be formed with the thinner thickness such that thecommon emission layer 372 and the auxiliary common electrode 272 may bemore easily removed.

The auxiliary common electrode 272 and the common emission layer 372together may have a common contact hole 72 exposing the auxiliaryelectrode 192 The main common electrode 271 may be connected with theauxiliary electrode 192 through the common contact hole 72 and theauxiliary opening 352.

Hereinafter, the cross-sectional structures of the organic lightemitting diode display device according to another exemplary embodimentwill be described in detail according to a stacking order with referenceto FIG. 22, FIG. 23, and FIG. 24.

A buffer layer 120 may be formed on a substrate 110. A semiconductor 130including a driving channel 131 a, a switching channel 131 b, acompensation channel 131 c, an initialization channel 131 d, anoperation control channel 131 e, a light emission control channel 131 f,a first storage electrode 132, and a first boosting electrode 133 may beformed on the buffer layer 120 of the pixel area P1. A driving sourceelectrode 136 a and a driving drain electrode 137 a may be formed onrespective sides of the driving channel 131 a in the semiconductor 130,and a switching source electrode 136 b and a switching drain electrode137 b may be formed on respective sides of the switching channel 131 b.The compensation source electrode 136 c and the compensation drainelectrode 137 c may be formed at both sides of the compensation channel131 c, and the initialization source electrode 136 d and theinitialization drain electrode 137 d may be formed at both sides of theinitialization channel 131 d. The operation control source electrode 136e and the operation control drain electrode 137 e may be formed at bothsides of the operation control channel 131 e, and the light emissioncontrol source electrode 136 f and the light emission control drainelectrode 137 f may be formed at both sides of the light emissioncontrol channel 131 f. The bypass source electrode 136 g and the bypassdrain electrode 137 g may be formed at both sides of the bypass channel131 g.

A first gate insulating layer 141 covering the semiconductor 130 may beformed thereon. A scan line 151 including a switching gate electrode 155b and a compensation gate electrode 155 c, a previous scan line 152including an initialization gate electrode 155 d, a light emissioncontrol line 153 including an operation control gate electrode 155 e anda light emission control gate electrode 155 f, a bypass control line 158including a bypass gate electrode 155 g, and a driving gate electrode (afirst storage electrode) 155 a may be formed on the first gateinsulating layer 141. A pair of first barrier members 59 may be formedon the first gate insulating layer 141 positioned at the pixel edge areaP2.

A second gate insulating layer 142 covering the first gate wires 151,152, 153, 155 a, and 59 and the first gate insulating layer 141 may beformed thereon. The first gate insulating layer 141 and the second gateinsulating layer 142 may be formed of a silicon nitride (SiNx) or asilicon oxide (SiOx).

A storage line 1540 disposed to be parallel to the scan line 151, asecond storage electrode 156 at a part extended from the storage line1540, and a repair line 159 disposed to be parallel to the scan line 151may be formed on the second gate insulating layer 142. A pair of thirdbarrier members 58 may be formed on the second gate insulating layer 142positioned at the pixel edge area P2.

An interlayer insulating layer 160 may be formed on the storage line1540, the second storage electrode 156, the repair line 159, the thirdbarrier members 58, and the second gate insulating layer 142. Theinterlayer insulating layer 160 may be formed of a silicon nitride(SiNx) or a silicon oxide (SiOx).

The interlayer insulating layer 160 may include contact holes 61, 62,63, 64, 65, 66, and 69. A data line 171, a driving voltage line 172, adriving connecting member 174, an initialization voltage line 178, and alight emission control connecting member 179 may be formed on theinterlayer insulating layer 160. A pair of second barrier members 79 maybe formed on the interlayer insulating layer 160 positioned in the pixeledge area P2. The second barrier member 79 may overlap the first barriermember 59 and the third barrier member 58. The second barrier member 79may cover both the first barrier member 59 and the third barrier member58. The first barrier member 59, the second barrier member 79, and thethird barrier member 58 may together form a barrier member 9.

The data line 171 may be connected to the switching source electrode 136b through the contact hole 62 formed in the first gate insulating layer141, the second gate insulating layer 142, and the interlayer insulatinglayer 160. One end of the driving connecting member 174 may be connectedto the first storage electrode 155 a through the contact hole 61 formedin the second gate insulating layer 142 and the interlayer insulatinglayer 160. The other end of the driving connecting member 174 may beconnected to the compensation drain electrode 137 c and theinitialization drain electrode 137 d through the contact hole 63 formedin the first gate insulating layer 141, the second gate insulating layer142, and the interlayer insulating layer 160.

The initialization voltage line 178 may be connected to theinitialization source electrode 136 d through the contact hole 64 formedin the first gate insulating layer 141, the second gate insulating layer142, and the interlayer insulating layer 160.

The emission control connecting member 179 may be connected to theemission control drain electrode 137 f through the contact hole 66formed in the first gate insulating layer 141, the second gateinsulating layer 142, and the interlayer insulating layer 160.

The data wires 171, 172, 174, 178, and 179 may be formed as a triplelayer of titanium/aluminum/titanium (Ti/Al/Ti),molybdenum/aluminum/molybdenum (Mo/Al/Mo), ormolybdenum/copper/molybdenum (Mo/Cu/Mo).

A passivation layer 180 covering the data wires 171, 172, 174, 178, and179 and the interlayer insulating layer 160 may be formed thereon. Thepassivation layer 180 may be formed as an organic layer. The passivationlayer 180 positioned at the pixel edge area P2 may include a protectionopening 82 exposing the barrier member 9.

A pixel electrode 191 and an auxiliary electrode 192 may be formed onthe passivation layer 180. The light emission control connecting member179 may be connected to the pixel electrode 191 through the contact hole81 formed in the passivation layer 180. The auxiliary electrode 192 maybe separated into a first auxiliary electrode 192 a and a secondauxiliary electrode 192 b. The ends of the first auxiliary electrode 192a and the second auxiliary electrode 192 b may be formed at positionscorresponding to a pair of the barrier members 9. The ends of the firstauxiliary electrode 192 a and the second auxiliary electrode 192 b maybe directly connected with the pair of barrier members 9 exposed throughthe protection opening 82.

A pixel definition layer (PDL) 350 covering the passivation layer 180,the auxiliary electrode 192, and the edge of the pixel electrode 191 maybe formed thereon. The pixel definition layer 350 may include a pixelopening 351 exposing the pixel electrode 191 and an auxiliary opening352 exposing the end of the auxiliary electrode 192. The barrier member9 may be positioned at the auxiliary opening 352 of the pixel definitionlayer 350. By maximally expanding the auxiliary opening 352, the stepsof the common emission layer 372, the auxiliary common electrode 272,and the main common electrode 271 formed on the pixel definition layer350 may be minimized such that the contact between the main commonelectrode and the auxiliary electrode 192 may be facilitated.

The organic emission layer 370 may be formed on the pixel electrode 191exposed by the pixel opening 351. The organic emission layer 370 mayinclude a pixel emission layer 371 formed in the pixel area P1 and acommon emission layer 372 formed to the pixel edge area P2. A commonelectrode 270 may be formed on the organic emission layer 370. Thecommon electrode 270 may include an auxiliary common electrode 272formed in the pixel area P1 and the portion of the pixel edge area P2,and a main common electrode 271 formed in the entire surface includingthe pixel area P1 and the pixel edge area P2.

The common emission layer 372 and the auxiliary common electrode 272together may have a common contact hole 72 exposing the end of theauxiliary electrode 192. When the main common electrode 271 is directlyconnected with the auxiliary electrode 192 exposed through the commoncontact hole 72 and the auxiliary opening 352, the resistance of thecommon electrode 270 may be reduced, thereby helping to prevent avoltage drop of the common electrode 270.

By way of summation and review, in a large-sized organic light emittingdiode display, it is desirable to minimize the resistance of thecathode. An auxiliary electrode that is connected with the cathode maybe formed in a pixel edge area. To simplify a manufacturing process andto reduce the number of masks, a portion among an organic emission layeremitting red, green, and blue may be commonly formed in all pixels. Asdescribed above, in the structure in which a common emission layer iscommonly formed in all pixels, when the common emission layer is formedin the pixel edge area, the common emission layer must be removed toconnect the cathode and the auxiliary electrode to each other.

A high resistance material may be inserted in the auxiliary electrode toremove the common emission layer, however an additional process toinsert the high resistance material is required, and the common emissionlayer is not normally removable when a resistance difference between thehigh resistance material and the low resistance material is notsufficiently large.

Embodiments provide an organic light emitting diode display in which aresistance increase of a common electrode applied to a large-sized topemission type of light emission structure is avoided or prevented, and amanufacturing method thereof.

According to embodiments, by forming a barrier member at a positionoverlapping the auxiliary electrode, the common emission layer and theauxiliary common electrode formed on the auxiliary electrode may beformed with a sufficiently thin thickness such that the common emissionlayer and the auxiliary common electrode formed on the auxiliaryelectrode may be removed by a discharge resulting from applying abreakdown voltage.

Accordingly, by forming the auxiliary electrode having the lowresistance at the common electrode, the resistance of the commonelectrode may be minimized to be applied to the top emission type oflight emission structure of a large size, thereby realizing a powerconsumption reduction, life prolongation, and light efficiencyimprovement.

Example embodiments have been disclosed herein, and although specificterms are employed, they are used and are to be interpreted in a genericand descriptive sense only and not for purpose of limitation. In someinstances, as would be apparent to one of ordinary skill in the art asof the filing of the present application, features, characteristics,and/or elements described in connection with a particular embodiment maybe used singly or in combination with features, characteristics, and/orelements described in connection with other embodiments unless otherwisespecifically indicated. Accordingly, it will be understood by those ofskill in the art that various changes in form and details may be madewithout departing from the spirit and scope thereof as set forth in thefollowing claims.

What is claimed is:
 1. An organic light emitting diode display,comprising: a substrate; a plurality of switching elements on thesubstrate; at least one barrier member on the substrate; a passivationlayer covering the plurality of switching elements, the passivationlayer including a protection opening exposing the barrier member; aplurality of pixel electrodes on the passivation layer, the pixelelectrodes being connected to the switching elements; a plurality ofauxiliary electrodes separated from and formed from a same layer as theplurality of pixel electrodes; an organic emission layer including apixel emission layer and a common emission layer sequentially formed onthe plurality of pixel electrodes; and a common electrode including anauxiliary common electrode and a main common electrode sequentiallyformed on the common emission layer, wherein the common emission layerand the auxiliary common electrode have a common contact hole at aposition corresponding to a position of the barrier member, and the maincommon electrode is connected with an auxiliary electrode of theplurality of auxiliary electrodes through the common contact hole. 2.The organic light emitting diode display as claimed in claim 1, wherein:the substrate includes a plurality of pixel areas and a plurality ofpixel edge areas between the plurality of pixel areas, and the barriermember, the protection opening, and the auxiliary electrode are locatedat a pixel edge area of the plurality of pixel edge areas.
 3. Theorganic light emitting diode display as claimed in claim 2, wherein: theauxiliary electrode includes a first auxiliary electrode and a secondauxiliary electrode separated from each other, the first auxiliaryelectrode and the second auxiliary electrode including ends that faceeach other.
 4. The organic light emitting diode display as claimed inclaim 3, wherein: the auxiliary electrode overlaps the barrier member.5. The organic light emitting diode display as claimed in claim 3,wherein: the barrier member is positioned between the first auxiliaryelectrode and the second auxiliary electrode.
 6. The organic lightemitting diode display as claimed in claim 5, wherein: the barriermember is exposed through the protection opening and the common contacthole, and the main common electrode is connected with the barriermember.
 7. The organic light emitting diode display as claimed in claim3, further comprising: a pixel definition layer covering a pixelelectrode of the plurality of pixel electrodes and the auxiliaryelectrode, the pixel definition layer including an auxiliary openingexposing a portion of the auxiliary electrode, and the barrier member ispositioned at the auxiliary opening.
 8. The organic light emitting diodedisplay as claimed in claim 7, wherein: the main common electrode isconnected with the auxiliary electrode exposed through the auxiliaryopening and the common contact hole.
 9. The organic light emitting diodedisplay as claimed in claim 8, wherein the auxiliary electrode exposedthrough the auxiliary opening is connected with the common emissionlayer.
 10. The organic light emitting diode display as claimed in claim1, further comprising: a scan line formed on the substrate andtransmitting a scan signal to a switching element of the plurality ofswitching elements; and a data line crossing the scan line andtransmitting a data signal to the switching element, and wherein, thebarrier member includes a first barrier member formed from a same layeras the scan line, and a second barrier member overlapping the firstbarrier member and formed from a same layer as the data line.
 11. Theorganic light emitting diode display as claimed in claim 10, wherein theswitching element includes: a switching transistor connected to the scanline and the data line, and a driving transistor connected to theswitching transistor.
 12. The organic light emitting diode display asclaimed in claim 10, further comprising: a third barrier member betweenthe first barrier member and the second barrier member, the thirdbarrier member overlapping the first barrier member and the secondbarrier member.
 13. A method for manufacturing an organic light emittingdiode display, the method comprising: forming a plurality of switchingelements and at least one barrier member on a substrate; forming apassivation layer covering a plurality of switching elements thepassivation layer including a protection opening exposing the barriermember; forming a plurality of pixel electrodes on the passivationlayer, a pixel electrode of the plurality of pixel electrodes beingconnected to a switching element of the plurality of switching elements;forming a plurality of auxiliary electrodes spaced apart from theplurality of pixel electrodes on the passivation layer, an auxiliaryelectrode of the plurality of auxiliary electrodes including a firstauxiliary electrode and a second auxiliary electrode; forming an organicemission layer sequentially including a pixel emission layer and acommon emission layer on the plurality of pixel electrodes; forming anauxiliary common electrode on the common emission layer; forming acommon contact hole through the common emission layer and the auxiliarycommon electrode, the common contact hole exposing a portion of theauxiliary electrode; and forming a main common electrode on theauxiliary common electrode, the main common electrode being connectedwith the auxiliary electrode through the common contact hole.
 14. Themethod as claimed in claim 13, wherein: the first auxiliary electrode isformed to be electrically separated from the second auxiliary electrode,and forming the common contact hole includes applying a breakdownvoltage between the first auxiliary electrode and the second auxiliaryelectrode to enable removal of the common emission layer and theauxiliary common electrode on the barrier member.
 15. The method asclaimed in claim 13, wherein the first auxiliary electrode and thesecond auxiliary electrode are formed to be equipotentially connected,and forming the common contact hole includes applying breakdown voltagebetween the auxiliary electrode and the auxiliary common electrode toenable removal the common emission layer and the auxiliary commonelectrode on the barrier member.
 16. The method as claimed in claim 13,wherein the substrate includes a plurality of pixel areas and aplurality of pixel edge areas formed between a plurality of pixel areas,and the barrier member, the protection opening, and the auxiliaryelectrode are formed at the pixel edge area.
 17. The method as claimedin claim 13, wherein: the barrier member and the auxiliary electrode areformed to be in an overlapping relationship.
 18. The method as claimedin claim 13, wherein: the barrier member is formed between the firstauxiliary electrode and the second auxiliary electrode.
 19. The methodas claimed in claim 13, further comprising: forming a pixel definitionlayer covering the pixel electrode and the auxiliary electrode andhaving an auxiliary opening exposing a portion of the auxiliaryelectrode, wherein the barrier member is positioned at the auxiliaryopening.
 20. The method as claimed in claim 19, wherein: the main commonelectrode is connected with the auxiliary electrode exposed through theauxiliary opening and the common contact hole.
 21. The method as claimedin claim 20, wherein the auxiliary electrode exposed through theauxiliary opening is connected with the common emission layer.